? 2016 ixys corporation, all rights reserved ds100708(02/16) high voltage power mosfet n-channel enhancement mode features ? high blocking voltage ? high voltage package advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits ? laser and x-ray generation systems IXTX4N300P3HV symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 3000 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 3000 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c4a i dm t c = 25 ? c, pulse width limited by t jm 12 a p d t c = 25 ? c 960 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting force 20..120 / 4.5..27 nm/lb.in weight 6 g v dss = 3000v i d25 = 4a r ds(on) ?? ?? ?? ?? ?? 12.5 ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 3000 v v gs(th) v ds = v gs , i d = 250 ? a 3.0 5.0 v i gss v gs = ? 20v, v ds = 0v ????????????????????? 100 na i dss v ds = 0.8 ? v dss , v gs = 0v 25 ? a t j = 125 ? c 2 ?? ma r ds(on) v gs = 10v, i d = 2a, note 1 12.5 ? g = gate d = drain s = source tab = drain to-247plus-hv d (tab) g s d advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTX4N300P3HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 2a, note 1 3.6 6.0 s c iss 3680 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 177 pf c rss 78 pf r gi gate input resistance 5.0 ? t d(on) 28 ns t r 21 ns t d(off) 82 ns t f 50 ns q g(on) 139 nc q gs v gs = 10v, v ds = 1.5kv, i d = 0.5 ? i d25 21 nc q gd 60 nc r thjc 0.13 ?? c/w r thcs 0.15 ?? c/w note: 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. resistive switching times v gs = 10v, v ds = 500v, i d = 0.5 ? i d25 r g = 2 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 420 ns q rm 440 ???????????? nc i rm 2.1 a i f = 2a, -di/dt = 100a/ s v r = 100v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved IXTX4N300P3HV fig. 2. output characteristics @ t j = 125oc 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 102030405060 v ds - volts i d - amperes v gs = 10v 4v 5v 6v fig. 3. r ds(on) normalized to i d = 2a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 4. r ds(on) normalized to i d = 2a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 1. output characteristics @ t j = 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 102030405060 v ds - volts i d - amperes v gs = 10v 5.5v 5v 6v fig. 6. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTX4N300P3HV fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 12 maximum transient thermal impedance aaaa 0.2 fig. 7. transconductance 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v gs - volts v ds = 1500v i d = 2a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms r ds( on ) limit 10ms dc 100ms 25s 100s
? 2016 ixys corporation, all rights reserved ixys ref: t_4n300p3hv(h8-628) 2-22-16 IXTX4N300P3HV to-247plus hv outline pins: 1 - gate 2 - source 3,4 - drain d2 2x a1 a3 d3 l1 d1 a2 e2 e3 4x 3x b1 e1 3x e r e1 a q d a a a a a 4 b c e 3 1 2
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